摘要
基于0.35μm CSMC CMOS工艺设计并流片了一款典型的带隙基准电压源芯片,输出不随温度变化的高精度基准电压。电路包括核心电路、运放和启动电路三部分。芯片在3.3V供电电压,-40oC到80oC的温度范围内进行测试,结果显示输出电压波动范围为1.2128V~1.2175V,温度系数为32.2 ppm/oC。电路的版图面积为135μm×236μm,芯片大小为1 mm×1 mm。
A typical bandgap voltage reference based on a 0.35 μm CSMC CMOS technology is designed and fabri-cated. The overall bandgap architecture is optimized to achieve high accuracy temperature independent voltage reference. The design consists of the bandgap core circuit,op-amp,and start-up circuit. The test results show that the bandgap reference circuit provides reference voltage from 1.2128V to 1.2175V with 3.3V power supply when temperature ranges from-40 oC to 80 oC,and the temperature coefifcient is 32.2 ppm/oC. The total layout area including dummy structures is 135 μm×236 μm,and the die area is 1 mm×1 mm.
出处
《软件》
2014年第5期33-36,共4页
Software
基金
教育部博士点基金(批准号:20121103120018)
国家自然科学基金(批准号:61204040
60976028)
北京市自然科学基金(批准号:4123092)
北京市教育委员会科技计划面上项目(批准号:JC002999201301)资助
关键词
基准电压源
温度系数
基准电压
Bandgap,Temperature coefficient,Voltage reference