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抗反膜设计改善半导体光放大器偏振不灵敏性的理论研究 被引量:1

Theoretical Study on Polarization Insensitivity Improvement of Semiconductor Optical Amplifiers by Antireflection Coating Designing
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摘要 通过理论分析和计算表明,适当地增加反射率,在同样的工作电流下,半导体光放大器(SOA)的增益将有所增大。合理地调节抗反膜的折射率和厚度,可以使TM模的反射率R_(TM)在一段波长范围内大于TE模的反射率R_(TE)。这样的反射率分布可以相对提高TM模的增益,在一定程度上改善SOA的偏振不灵敏性。通过抗反膜的设计来辅助解决偏振不灵敏的问题,可以使SOA在有源区和波导设计中获得更大的灵活性,更好地兼顾其他的性能要求。 Theoretical analysis and calculations indicate that the gain of a semiconductor optical amplifier (SOA) will increase if reflectivity increases appropriately. By selecting appropriate refractive index and thickness of the antireflection film, the reflectivity of TM mode is larger than that of TE mode in a range of wavelength, such a reflectivity distribution can increase the gain of TM mode relatively, improve the polarization insensitivity of SOA and give SOA more flexibility in designing active region and waveguide to meet the requirements needed by other performances.
出处 《中国激光》 EI CAS CSCD 北大核心 2003年第7期633-636,共4页 Chinese Journal of Lasers
基金 国家973项目资助课题(编号:G2000036605) 863计划资助课题(2002AA312130)
关键词 薄膜物理学 半导体光放大器 偏振不灵敏 抗反膜 反射率 Antireflection coatings Light amplifiers Physics Polarization Reflection Thin films
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参考文献6

  • 1Lennart Atterrnas, Lars Thylén. Single-layer antireflection coating of semiconductor lasers:polarization properties and the influence of the laser structure[J].J.Lightwave Technol,1989,7(2):426-430.
  • 2C. E. Zah, C. Caneau. F. K. Shokoohiet al.. 1.3 μm GaInAsP near-traveling-wave laser amplifiers made by combination of angled facets and antireflection coatings[J]. Electron. Lett., 1988. 24(20):1275-1276.
  • 3Katsuaki Magari, Minoru Okamoto, Yasuhiro Suzuki et al.. Polarization-insensitive optical amplifier with tensile-strained-barrier MQW structure [J]. IEEE J. Quantum Electron. , 1994, 30(3) : 695-702.
  • 4C. Y. J. Chu, H. Ghafouri-Shiraz. Analysis of gain and saturation characteristics of a semiconductor laser optical amplifier using transfer matrices [J]. J. Lightwave Technol. , 1994, 12(8) : 1378-1385.
  • 5T. Saitoh, T. Mukai. Theoretical analysis and fabrication of antireflection coatings on laser-diode facets[J]. J. Lightwave Technol. , 1985, 3(2):288-292.
  • 6M. Born. E. Wolf. Principle of Optics [M]. 5th Ed..New york: Pergamon. 1975. 55-62.

同被引文献6

  • 1Du Guotong,Xu Chengdong,Liu Yang,et al.High-power integrated superluminescent light source.IEEE J Quantum Electron,2003,39(1):149
  • 2Annetts P J,Asghari M,White I H.The effect of carrier transport on the dynamic performance of gain-saturation wavelength conversion in MQW semiconductor optical amplifiers.IEEE J Sel Topics Quantum Electron,1997,3(2):320
  • 3Reagle A,Di Carlo A,Lugli P,et al.Study of gain compression mechanisms in multiple-quantum-well In1-xGaxAs semiconductor optical amplifier.IEEE J Quantum Electron,1999,35(11):1697
  • 4Lin C F,Wu B R,Laih L W,et al.Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers-superluminescent diodes.Opt Lett,2001,26(14):1099
  • 5Wu B R,Lin C F,Laih L W,et al.Extremely broadband InGaAsP/InP superluminescent diodes.Electron Lett,2000,36(25):2093
  • 6黄黎蓉,黄德修,缪庆元.基于半导体光放大器交叉偏振调制的波长转换分析[J].Journal of Semiconductors,2003,24(8):882-886. 被引量:2

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