并五苯场效应发光管机理分析与场效应管制作

Analysis and Fabrication of Light-emitting Field-effect Transistor Based on Pentacene

采用并五苯材料,通过物理气相沉积,生长出无依托的晶体薄膜,厚度在微米量级,长度是毫米量级,长度和厚度的比大约为1000。为了使晶片有个依托,以聚酰亚胺作为粘合剂,把并五苯晶体薄膜平铺粘在玻璃衬底上。在显微镜下观测,有机薄膜平整、无裂痕,符合制备器件的要求。然后,制备出有机场效应管。并对有机场效应管I V特性和发光机理进行了分析探讨。

Organic thin film transistors and electronics are of interest for lowcost highinformation content displays, especially on flexible substrates, and for other largearea electronic applications. Ambipolar fieldeffect transistors, which operate as either n or pchannel devices, depending on the polarity of the gate bias, can operate in a mixed or bipolar mode. They have been realized with amorphous silicon, organic semiconductor heterostructures, and organic single crystal. We report here on the structure and operating characteristics of an ambipolar organic light emitting fieldeffect transistor based on single crystal of the pentacene. The electrons and holes are injected equally from the source and drain respectively and the drain current can be controlled by the adjusting gate and drainsource voltages. Excitons are generated, leading to radiative recombination. We grown the single crystal thinfilm based on pentacene by physical vapor deposition and fabricated organic fieldeffect transistor using it. The thickness of the film is about some few micrometer and the length is about some few millimeter. The proportion between the length and thickness is about 1 000. Using polyimide as bond organic thinfilm was tiled on the glass substrate. By magnetic controlled sputtering method, choosing appropriate condition of sputtering, Al as sourcedrain electrode, Al2O3 as insulation layer and Al as gate electrode were obtained. Then, we measure IV characteristics and discuss luminescence principle about organic fieldeffect transistors. The most important two factors of the success are the use of organic single crystal with high mobility and the employ of the fieldeffect structure to control injection for the ambipolar organic light emitting fieldeffect transistor.