摘要
为改善PTCR陶瓷材料的电学性能,采用AgNO3作为Ag掺杂原料,用溶胶–凝胶一步法合成了含Ag元素的BaTiO3基PTCR陶瓷,着重讨论了银含量对半导体陶瓷电学性能的影响规律。结果表明,适量的Ag掺杂对材料的室温电阻率(r)影响不大,并且还可以有效提高PTCR陶瓷的温度系数(aR)和耐电压(Vb)。本实验中掺杂0.05%Ag(摩尔分数)时,获得的PTCR陶瓷性能较好:r≈28 W·cm,a25>16%℃1,Vb>180 V·mm1。
Silver was doped with AgNO3 as starting material, and BaTiO3-based ceramics prepared by a once-through method in sol-gel process. Effect of Ag content on the electrical properties of PTCR ceramics was discussed. The experimental results show that positive temperature coefficient of resistance and breakdown voltage increase, but the resistivity of PTCR ceramics at room temperature changes little when appropriate Ag doped. In this experiment, mol 0.05% of Ag was doped, and of the PTCR ceramics r2528 W·cm, a25>16%C-1, and Vb>180 V·mm-1.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2003年第9期24-26,共3页
Electronic Components And Materials
关键词
PTCR
溶胶-凝胶法
阻温系数
掺杂
PTCR
sol-gel process
resistivity-temperature coefficient
doping