摘要
选用导热性能优良、半导化的(-SiC作为边界层电容器基体材料,利用氧化铝、滑石、粘土和长石组成的低共熔混合物作为晶界绝缘材料,通过常压一次烧结工艺制备边界层陶瓷电容器.烧成温度范围为1 280~1 320℃,最高温度下保温4 h.获得的边界层电容器电阻率大于1010 Ω@cm,在50 Hz频率下相对介电常数εr为260,介质损耗tgδ为1.27×10-4,两者均随频率的增大而减小.
a-SiC particles, ranging from 3 mm to 28 mm, were chosen as the basic material of the ceramic grain boundary capacitors for their high thermal conductivity and semi-conductive features. The eutectic composite of Al2O3, talc, feldspar and clay was chosen as the insulation material of grain boundary. Specimens were prepared by single-firing process in the atmosphere, sintered at the temperature of 1 280 to 1 320 C for 4 hours. Of the specimens, the relative dielectric constant is 260 at 50 Hz, and the dielectric loss is 1.27104, both drop with the increase of frequency.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2003年第9期9-10,14,共3页
Electronic Components And Materials
关键词
碳化硅
边界层电容器
介电常数
一次烧成
silicon carbonate
grain boundary capacitors
dielectric constant
single-firing process
