半导体光放大器宽带ASE噪声谱数值模型

Wideband ASE noise spectrum numerical model of semiconductor optical amplifier

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摘要采用宽带数值模型 ,计算了半导体光放大器 ( SOA)中宽带 ASE谱在空间和频域的演化。结果表明 ,在 SOA有源区内的载流子密度分布是高度非均匀的。在小信号注入时 ,正向和背向 ASE是引起SOA中强的纵向空间烧孔效应的主要因素。 The space and spectrum evolutions of ASE in semiconductor optical amplifier is investigated by means of a wideband numerical model. The simulation reaults show that the carrier densities distribution within the active layer of SOA are highly non-uniform. At small signal injection, the occurrence of longitudinal spatial hole burning mainly due to the forward and backward traveling amplified spontaneous emission(ASE)along the active layer of SOA.

作者陈俊刘应开杜雷鸣

机构地区云南师范大学物理与电子信息学院

出处《云南师范大学学报（自然科学版）》 2003年第5期29-33,共5页 Journal of Yunnan Normal University:Natural Sciences Edition

基金云南师范大学青年基金 2 0 0 2年资助项目 ( 2 0 0 3 0 0 3 )

关键词半导体光放大器自发辐射宽带ASE噪声谱数值模型载流子空间烧孔效应 semiconductor optical amplifier ASE noise spatial hole burning

分类号 TN722.32 [电子电信—电路与系统]

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云南师范大学学报（自然科学版）

2003年第5期

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半导体光放大器宽带ASE噪声谱数值模型

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