摘要
概括了宽带隙半导体材料碳化硅的主要特性及生长方法,介绍了其在微电子及光电子领域的应用,并对其发展动态及存在问题进行了简要评述。
The main characteristics and growth methods of SiC materials are s ummarized.Its applications in the fields of microelectronics and optoelectronic s are also introduced.The trends of the development of SiC materials and the e xisting problems are appraised and commented.
出处
《微纳电子技术》
CAS
2003年第9期39-43,共5页
Micronanoelectronic Technology
关键词
碳化硅
宽带隙半导体材料
生长技术
光电子学
微电子
wide band-gap semico nductor
SiC
optoelectronics CLC number:TN304.24Document code:A Articl e ID:1671-4776(2003)09-0039-05