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碳化硅宽带隙半导体材料生长技术及应用(英文)

The growth methods and applications of wide band-gap semiconductor SiC
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摘要 概括了宽带隙半导体材料碳化硅的主要特性及生长方法,介绍了其在微电子及光电子领域的应用,并对其发展动态及存在问题进行了简要评述。 The main characteristics and growth methods of SiC materials are s ummarized.Its applications in the fields of microelectronics and optoelectronic s are also introduced.The trends of the development of SiC materials and the e xisting problems are appraised and commented.
作者 王强 李玉国 石礼伟 孙海波
机构地区 山东师范大学半导体研究所
出处 《微纳电子技术》 CAS 2003年第9期39-43,共5页 Micronanoelectronic Technology
关键词 碳化硅 宽带隙半导体材料 生长技术 光电子学 微电子 wide band-gap semico nductor SiC optoelectronics CLC number:TN304.24Document code:A Articl e ID:1671-4776(2003)09-0039-05
分类号 TN304.24 [电子电信—物理电子学]
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微纳电子技术
2003年 第9期

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