硅微ZnO压电薄膜传声器的研制

Silicon based ZnO piezoelectric film micromachined microphone

本文介绍了一种利用ZnO压电薄膜为换能器的硅微压电薄膜传声器的制备,并且对微机械加工工艺过程进行了较为详细的描述。本文对传声器的部分结构进行改进,与通常设计相比较大幅提高了传声器的性能,1000Hz基准频率的灵敏度达到-85dB(相对于1V/Pa),500Hz到10000Hz的频率响应的平坦度在±3dB范围内。

This paper presents the fabrication of a silicon based ZnO piezoelectric film microphone. Micromachining techniques to fabricate the device are described in detail. The structure of this microphone has been modified from our earlier version one, the performance of the device is improved. The sensitivity at the standard frequency (1000Hz) is -85dB (ref. IV/Pa). The flatness of its frequency response from 500Hz to 10000Hz is ±3dB.