期刊文献+

脉冲激光烧蚀沉积纳米Si膜动力学研究现状 被引量:2

Progress of Dynamic Study for Silicon Nanoparticales Deposited by Pulsed Laser Ablation
下载PDF
导出
摘要 Si基纳米材料在半导体光电集成领域有着十分诱人的前景 ,脉冲激光烧蚀技术是目前材料界和分析界最有前景的技术之一 .介绍了脉冲激光烧蚀沉积Si基纳米材料的基本原理 。 Nanostructrured Si_based materials have wide prospect in the semiconductor opto_electronic integration field.Pulse laser ablation is one of the most important developed technique in recent years with its applications in material and analytical fields. The fundamental theory of Silicon nanoparticales deposited by pulse laser ablation was introduced and its dynamic study in recent years was systematically reviewed from theory and experiment.
出处 《河北大学学报(自然科学版)》 CAS 2003年第3期329-333,共5页 Journal of Hebei University(Natural Science Edition)
基金 河北省自然科学基金资助项目 (5 0 0 0 84 )
关键词 脉冲激光烧蚀 沉积 动力学 纳米Si膜 laser ablation deposition dynamics
  • 相关文献

参考文献28

  • 1彭英才,何宇亮.纳米硅薄膜研究的最新进展[J].稀有金属,1999,23(1):42-55. 被引量:21
  • 2魏合林,刘祖黎,姚凯伦.超薄膜生长的Monte-Carlo研究[J].物理学报,2000,49(4):791-796. 被引量:23
  • 3张树东,张为俊.激光烧蚀Al靶产生的等离子体中辐射粒子的速度及激波[J].物理学报,2001,50(8):1512-1516. 被引量:21
  • 4钟志成,李智华,张端明,关丽.脉冲高能准分子激光烧蚀块靶产生等离子体的动力学过程的差分模拟[J].强激光与粒子束,2001,13(3):317-320. 被引量:6
  • 5WERWA E, SERPHIN A A, CHIU L A, et al. Synthesis and processing of silicon nanocrystallites using a pulsed laser ablation supersonic expansion method[J]. Appl Phys Lett, 1994,64(14) : 1821 - 1823.
  • 6SHIBA K, NAKAGAWA K, IKEDA M, et al. Optical absorption and photoluminescence of self-assembled silicon quantan dots[J]. Jpn J Appl Phys, 1997,36(10) : L1279 - L1282.
  • 7MIZVTA T, TALEUCHI D, KAWAGUCHI Y, et al. Hydrogenation dynamics of si nanoparticles with green photoluminescence[J]. Appl Surf Sci,2002,197- 198:574-576.
  • 8TAKEUCHI D, MIZUTA T, MAKIMURA T, et al. Deposition dynamics of droplet-free Si nanoparticles in Ar gas using laser ablation [J]. Appl Surf Sci, 2002,197 - 198: 674 - 678.
  • 9OHYANAGI T, MIYASAITA A, MURAKIMI K, et al. Time-and-space resolued X-ray absorpting spectroncopy of laser-ablated Si particles[J]. Jpn J Appl Phys, 1994,33(5):2586- 2592.
  • 10MAKTVNARA T, SAKURAMOTO Y, MURARAMI K. Time-resolved x-ray absorption spectroscopy of laser-ablated silicon particles in xenon gas[J]. Jpn J Appl Phys, 1996,35(6) :L735 -737.

二级参考文献75

  • 1刘湘娜,何宇亮,F.WANG,R.SCHWARZ.纳米硅薄膜光吸收谱的研究[J].物理学报,1993,42(12):1979-1984. 被引量:5
  • 2袁凯华,戎霭伦,何宇亮,万明芳,魏希文.微晶与纳米硅薄膜表面形貌分形特征的研究[J].科学通报,1996,41(14):1339-1343. 被引量:2
  • 3余明斌 何宇亮 等.-[J].物理学报,1995,44:634-634.
  • 4何宇亮.-[J].半导体杂志,1996,21:43-43.
  • 5刘明 彭英才 等.掺杂纳米硅膜的研制.1996年中国材料学术研讨会[M].北京:-,1996,11..
  • 6盛殊然.氢化非晶硅的稳定性研究[学位论文].北京:中国科学院半导体研究所,1997..
  • 7彭英才 王英民 等.-[J].真空科学与技术学报,1996,16:185-185.
  • 8何宇亮 余明斌 等.-[J].自然科学进展,1996,6:700-700.
  • 9刘明 余明斌 等.-[J].电子学报,1997,25:62-62.
  • 10牧村哲也 国井康彦 等.-[J].表面(日),1996,28:467-467.

共引文献67

同被引文献12

  • 1CANHAM L T. Silicon quantum wire array fabrication by electro-chemical andchemical dissolution of wafers [J]. Appl Phys Lett, 1990, 57(10):1046-1048.
  • 2WERWA E, SERAPHIN A A, CHIU L A, et al. Synthesis and processing of silicon nanocrystallites using a pulsed laser ablation supersonic expansion method[J]. Appl Phys Lett, 1994, 64(14):1821-1823.
  • 3YOSHIDA T, TAKEYAMA S, YAMADA Y, et al. Nanometer-sized silicon crystallites prepared by excimer laser ablation in constant pressure inert gas [J]. Appl Phys Lett, 1996, 68(13):1772-1774.
  • 4LOWNDES D H, ROULEAU C M, THUNDAT T, et al. Silicon and zinc telluride nanoparticles synthesized by pulsed laser ablation: size distributions and nanoscale structure[J]. Appl Surf Sci, 1998, 127-129: 355-361.
  • 5WANG Y L, ZHANG R M, FU G S, et al. Formation process of Si nanoparticles deposited by pulse laser ablation[J]. Proc of SPIE, 2004, 5280(APOC2003):78-84.
  • 6FU G S, WANG Y L, CHU L Z, et al. The size distribution of Si nanoparticles prepared by pulsed-laser ablation in pure He, Ar or Ne gas[J]. Europhys Lett, 2005, 69(5):758-762.
  • 7HAN M, GONG Y C, ZHOU J F, et al. Plume dynamics during film and nanoparticles deposition by pulsed laser ablation[J]. Phys Lett A, 2002, 302:182-189.
  • 8Canham L T. Silicon quantum wire array fabrication by electro-chemical and chemical dissolution of wafers[J]. Appl Phys Lett, 1990, 57(10) : 1046 - 1048.
  • 9Werwa E, Seraphin A A, Chiu L A, et al. Synthesis and processing of silicon nanocrystallites using a pulsed laser ablation supersonic expansion method [J ]. Appl Phys Lett, 1994, 64(14) : 1821 - 1823.
  • 10Yoshida T, Takeyama S, Yamada Y, et al. Nanometersized silicon crystallites prepared by excimer laser ablation in constant pressure inert gas [J]. Appl Phys Lett, 1996, 68(13):1772-1774.

引证文献2

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部