深亚微米槽栅PMOSFET特性研究

Study on the Characteristics for Deep-Sub-Micron Grooved-Gate PMOSFET

基于流体动力学能量输运理论,对槽栅PMOSFET器件的端口特性进行了仿真研究,包括栅极特性、漏极驱动能力和抗热载流子性能等。仿真结果表明,与平面器件相比,槽栅结构很好地抑制了短沟道效应和漏感应势垒降低效应,并具有较好的抗热载流子性能,但其漏极驱动能力低于平面器件,并从内部物理机制上解释了上述区别。

Based on the hydrodynamic energy transport model, the port electrical characteristics of groovedgate PMOSFET′s are studied, including gate characteristics, drain characteristics and hotcarriereffects. Compared with the conventional planar devices, the results manifest that groovedgate PMOSFET′s suppress the shortchanneleffect and drain induced barrier lowering effect, while the hotcarriereffect immunity is good, but the drain driving capability is lower than those planar ones. Finally the differences mentioned above are analyzed from the aspect of interior physical mechanism.