掺有K_4Fe(CN)_6/K_3IrCl_6/K_4Ru(CN)_6的AgClBr微晶的光电子时间分辨谱

Photoelectron Time-resolved Spectra of AgClBr Crystals Doped with Shallow Electron Trap Dopants

微波吸收介电谱检测技术具有很高的时间分辨率 ,可用于固体中电子输运特性的无接触测量 ,是研究晶体中光生载流子寿命及其迁移行为的有效方法。本文利用高时间分辨的微波吸收薄膜介电谱检测装置 ,测量了掺杂K4Fe(CN) 6,K3 IrCl6和K4Ru(CN) 6的AgClBr晶体在 35ps超短脉冲激光曝光后的光电子衰减的时间分辨谱。得到了不同的掺杂剂对AgClBr乳剂的自由光电子和浅俘获光电子的时间特性的影响关系。试验结果表明 ,对于所用的 3种乳剂 ,在掺杂量为 1× 10 -6、掺杂位置为 30 %时 ,掺杂K4Fe(CN) 6的AgClBr乳剂的自由光电子衰减时间相对较短 ,感光度相对较高。利用此方法可进一步研究乳剂光电子时间特性与掺杂剂、颗粒形状、颗粒结构、光谱增感和化学增感剂等参数的依赖关系。

Microwave absorption and film dielectric spectrum detection technology with a high time resolution was used for contactless measurement of electron characteristics in solid materials. The photoelectron decay time-resolved spectra of free electrons and shallow-trapped electrons in AgClBr crystals doped with K4Fe(CN)(6), K3IrCl6 and K4Ru(CN)(6) illuminated by 35 ps super short pulse laser were measured by dielectric spectrum equipment in this paper. The influence of various dopants on the photoelectron decay temporal characteristics of AgClBr emulsions was analyzed and the optimal dopants were obtained. For K4Fe(CN)(6), K3IrCl6 and K4Ru(CN)(6) dopants, the experiment results show that the free photoelectron decay time and relative sensitivity of AgClBr emulsion doped with K4Fe(CN)(6) at a Content of 1 X 10(-6) mol.L-1 Ag and 30% doping position is relative shorter and relative higher, respectively.