期刊文献+

热压工艺制备高纯致密Ti_3AlC_2材料

Fabrication of Ti_3AlC_2 Material with High Purity and Density by Hot-Pressing
下载PDF
导出
摘要 原料配比为n(TiC):n(Ti):n(Al):n(Si)=2:1:1:0.2的起始混合粉料在1300~1500℃温度下,30MPa压力下热压2h制得高纯致密Ti3AlC2块体材料。添加适量硅作助剂显著加快Ti3AlC2的反应合成,使Ti3AlC2在1200℃的温度下大量生成,能谱仪分析表明Si在材料中均匀分布。1300℃和1400℃烧结所得Ti3AlC2颗粒均呈六方板状结晶形貌,其在平面内尺寸大小分别为3~6μm和10~20μm。 Bulk Ti3AlC2 material with high purity and density has been fabricated by pressing the powders mixture with the composition of TiC:Ti:Al:Si=2:1:1:0.2in molar ratio,at the temperature of 1300~1500℃ and the pressure of 30MPa for 2h.Investigated by X-ray diffraction and scanning electron micrograph,it is revealed that appropriate addition of aluminum in the starting mixture accelerated the reaction synthesis of Ti3AlC2,and Ti3AlC2 formed in great quantities at the temperature as low as 1200℃.The EDS results indicate that silicon uniformly distributed in the material.Ti3AlC2 sintered at 1300℃ and 1400℃ is of plane shape with the size of 3~6μm,and 10~20μm in elongated dimension respectively.
出处 《佛山陶瓷》 2003年第9期1-3,共3页 Foshan Ceramics
关键词 热压工艺 制备 高纯致密 TI3ALC2 碳化钛铝 titanium aluminum carbide,hot pressing,high purity and density,silicon
  • 相关文献

参考文献8

  • 1Tzenov N V, Barsoum M W.J. Am. Ceram. Soc.,2000,83(3)823-832
  • 2Barsoum M W, Brodkio D, El-Raghy T. Scripta Materiatia,1997,36(5):535-541
  • 3Barsoum M W. Prog. Solid St. Chem.,2000,28:201-281
  • 4Pietzka M A.Schuster J C J. Phase Equilib.,1994,15 (4):392-398
  • 5李小雷,周爱国,汪长安,马小娥,刘豫.自蔓延高温合成Ti_3AlC_2和Ti_2AlC及其反应机理研究[J].硅酸盐学报,2002,30(3):407-410. 被引量:31
  • 6Wang X H, Zhou Y C.Journal of Materials Chemistry.2002,12(3):455-460
  • 7Zhu J Q, Mei B C, He P, Let al. Trans. Nonferrous Met.Soc. China, 2003,13(1):46-49
  • 8朱教群(ZHUJiao-Qunetal.) 梅炳初 陈艳林.无机材料学报(Journal of Inorganic Materials),2003,18(3).

二级参考文献3

共引文献30

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部