电沉积法制备Cu_xS薄膜及其性质研究

FABRICATION AND CHARACTERIZATION OF Cu_xS THIN FILM BY ELECTRODEPOSITING

利用电沉积的方法制备CuxS薄膜,研究了不同的络合剂,不同的硫源及不同的热处理温度对电沉积制备CuxS薄膜性质的影响。研究发现:不同的络合剂可以制备得到不同相的CuxS薄膜,用EDTA作为络合剂的时候得到是六方相的Cu2S其主要晶面是(102),当用柠檬酸钠作为络合剂的时候得到的是单斜的Cu31S16其主要晶面是(842)。当用Na2S2O3作为硫源的时候得到的是单斜的Cu31S16其主要晶面是(842),当用硫脲作为硫源的时候得到是六方相的Cu2S其主要晶面是(102)。随着热处理温度的提高,薄膜的结晶程度有了很大的提高,晶粒有了明显的长大,不同温度的热处理证实了CuxS薄膜的生长是沿着[102]方向定向生长的。

The CuxS thin films were prepared by low-cost electrodeposition. Moreover, the effects of deposition condition such as complexing agent, sulphur source and annealing temperature on the properties of CuxS thin films were investigated. Hexagonal phase CuxS thin films with the main plane (102) and monoclinic CuxS thin films phase with the main plane (842) were fabricated when respectively using EDTA arid sodium citrate as the complexing agent. Hexagonal phase Cu2S thin films with the main plane (102) and monoclinic Cu31S16 thin films phase with the main plane (842) were fabricated using thiourea and Na2S2O3 respectively as the sulphur resource. The crystal degree was greatly improved and the grain was obviously grown up with the increase of annealing temperature. It was proved that the grains grow nearly along the crystal direction of [102].