X射线衍射法测定MoO_3在γ-Al_2O_3表面的最大单层分散量

MEASURING MoO_3 MAXIMUM SINGLE LAYER DISTRIBUTION THRESHOLD VALUE ON THE SURFACE OF γ-Al_2O_3 BY X-RAY DIFFRACTION

对MoO3在γ Al2O3表面的分散进行了测定。晶相MoO3与载体γ Al2O3充分混合后,在低于MoO3熔点的适当温度下培烧。当MoO3的含量低于某一数值时,MoO3晶相的X射线衍射峰完全消失,MoO3的含量高于该数值时,晶相峰并不消失,但强度减弱。用X射线衍射可测定培烧后的残余晶相量,进而可得到MoO3在γ Al2O3表面的最大分散度数值。此研究方法也可用于其它化合物在载体表面的最大分散量的测定。

MoO_3 distribution threshold value on the surface of γ-Al_2O_3 is measured in this work.. After crystal phase MoO_3 and carrier γ-Al_2O_3 are fully compounded, they are baked at proper temperature below MoO_3 melting point. When MoO_3′s content is lower than a certain value, X-ray diffraction peak of crystal phase MoO_3 will disappear. When MoO_3′s content is higher than this value, crystal phase peak do not disappear, but its intensity will weaken. X-ray diffraction can measure remained crystal phase amount after baking and obtain MoO_3 maximum single layer distribution threshold value on the surface of γ-Al_2O_3. This work also shows the possibility of measuring maximum single layer distribution amount of other mixtures on the surface of carrier.