摘要
分析了4H-SiC射频功率MESFET栅源和栅漏区域内的表面态形成,建立了包含表面态影响的非线性解析模型,理论描述了对器件输出特性的稳态、瞬态响应.本模型具有计算简单、物理概念清晰的特点.
An analytical non\|linear model including surface\|state effect is proposed for 4H\|SiC power MESFET's with which the impact of suface damage at the ungate recess region caused by the dry\|etching process on the output steady\|state characterization can be illustrated clearly.The model has the advantage in very simple calculations over the 2D numerical simulations, therefore suitable for process analysis of SiC power MESFET's.
出处
《计算物理》
CSCD
北大核心
2003年第5期418-422,共5页
Chinese Journal of Computational Physics
基金
国防科技预研基金(No.8.1.7.3)资助项目
