摘要
碳化硅粉末经压制成型后,在高温常压下固相烧结制成多孔碳化硅样品。用紫外激光对样品激发,样品的光致发光谱在低温下在2.02eV位置出现一发光主峰,在2.13eV位置出现一微弱肩峰;在室温下发光峰位置有所蓝移。样品的电阻率随着烧结温度的上升而上升,随着成型压力的升高而降低。发光来自缺陷态。
Sample of porous SiC polycrystals are prepared by solid sintering process under high temperature and normal pressure using moulding SiC powder.Upon the excitation of ultraviolet light (UV), a photoluminescence peak and a weaker shoulder peak are found at 2.02 eV and 2.13 eV respectively at low temperature. The luminescent peak position has some blueshift occurence at the room temperature. The electrical resistivity rises as the sintering temperature rises, and falls as the moulding pressure rises. A defective model is suggested to explain the UVinduced PL variation in porous SiC.
出处
《西安理工大学学报》
CAS
2003年第2期120-123,共4页
Journal of Xi'an University of Technology
关键词
多孔碳化硅
烧结
光致发光
电阻率
porous SiC
sintering
photoluminescence
electrical resistivity