铌膜的反应离子束刻蚀

REACTIVE ION ETCHING OF NIOBIUM

反应离子束刻蚀(RIE)是制备以铌为上、下电极的SIS结的重要步骤。本方研究了反应气体为CF_4/O_2,阳极和阴极表面材料分别为聚四氟乙烯和石英时的铌及光刻胶的刻蚀情况,测出了氧气含量与铌及光刻胶的刻蚀速率的关系曲线及总溅射气压与铌的刻蚀速率的关系曲线,其结果对制备Nb/Al—AlO/Nb SIS隧道结有一定的参考价值。

The RIE procees can be useful in producing Nb electrodes for SIS junction. In this paper the RIE of Niobium and photoresist in CF_4/O_2 gases, quartz plate cathode and teflon anode has been studied. The curves of etching rates of Niobium and photoresist vs. percentage of oxygen on CF4_ /O_2 and the curve of etching rates as a function of pressure have been obtained, which will offer some. advice for the fabrication of Nb/Al-AlO_x/Nb SIS junction.