摘要
Silicon carbide (SiC) is an excellent microelectronic material used to fabricate high frequency, high temperature,high power and non-volatile memory devices.But due to its indirect band gap,SiC based LED cant emit light so efficiently as GaN based LED, so people are eager to seek effective means to improve its luminescence efficiency. Amorphous SiC, porous crystalline SiC, nanometer SiC produced by CVD methods and porous SiC formed by ion implantation are investigated, and great progresses have been gained during the latest few years,which make SiC a promising material for developing OEIC.
Silicon carbide (SiC) is an excellent microelectronic material used tofabricate high frequency, high temperature, high power and non―volatile memory devices. But due toits indirect band gap, SiC based LED can't emit light so efficiently as GaN based LED, so people areeager to seek effective means to improve its luminescence efficiency. Amorphous SiC, porouscrystalline SiC, nanometer SiC produced by CVD methods and porous SiC formed by ion implantation areinvestigated, and great progresses have been gained during the latest few years, which make SiC apromising material for developing OEIC.
基金
NationalNaturalScienceFoundationofChina(90 2 0 10 2 5and 6 0 0 710 0 6 )
