4BUHRER G.Application of vapor phase decomposition/total reflection X-ray fluorescence in the silicon semiconductor manufacturing environment[J].Spectrochim Acta:B,1999,54(10):1399-1407.
5STEWART D A,NEWTON D C.Determination of iron in semiconductor-grade silicon by furnace atomic-absorption spectrometry[J].Analyst,1983,108(1293):1450-1458.
6BULDINI P L,TOPONI A,ZINI Q.Polarographic determination of metallic impurities on lapped silicon wafers[J].Microchem J,1988,38(2):241-245.
7BULDINI P L,MEVOLI A,SHARMA J L.LA-ICP-MS,IC and DPASV-DPCSV determination of metallic impurities in solar-grade silicon[J].Talanta,1998,47(1):203-212.
8HAN Y,KINGSTON H M,RICHTER R C,PIROLA C.Dual-vessel integrated microwave sample decomposition and digest evaporation for trace element analysis of silicon material by ICP-MS:design and application[J].Anal Chem,2001,73(6):1106-1111.
9RAMANJANEYULU P S,SAYI Y S,RAMAKUMAR K L.Determination of boron in uranium-aluminum-silicon alloy by spectrophotometry and estimation of expanded uncertainty in measurement[J].J Nucl Mater,2008,378(2):139-143.
10PARASHAR D C,SARKAR A K,SINGH N.Spectrophotometric determination of traces of boron in high purity silicon[J].Anal Lett,1989,22(8):1961-1967.
