隧道带间级联双波长可见光半导体激光器制备

Fabrication of a Dual-wavelength Visible Light Laser Diode Cascaded by Tunnel Junction

利用金属有机物化学汽相淀积(MOCVD)一次外延生长了含有2个有源区的隧道带间级联双波长可见光半导体激光器(LD)材料。其隧道结为GaAs。2个有源区分别为AlGaAs单量子阱和GaInP多量子阱。SEM照片表明,材料生长质量良好。用生长的材料制备了双沟深腐蚀结构F P腔激光器。器件的阈值电流为177mA,未镀膜时的单面斜率效率为1.3W/A,远场为单瓣,垂直和水平方向的发散角分别为8°和34°。在输出光功率为100mW时,2个激射波长分别为699nm和795nm,与PL测试结果相一致。

The material of a dualwavelength visible light semiconductor laser diode(LD) is grown by the metal organic chemical vapor deposition(MOCVD) system within one run.The device has two active regions of AlGaAs single quantum well and GaInP multiquantum well connected by a GaAs tunnel junction.SEM photograph shows that the quality of the epilayer is perfect.Measurements show that the device has a threshold current of 177 mA,the slop efficiency of 1.3 W/A without coating,and the farfield FWHM of 8° and 34° respect to horizontal and vertical direction,the laser lasing wavelengthes are 699 nm and 795 nm at an output power of 100 mW.