氟化物气相沉积制备钨涂层

Fluorides CVD Methode for Tungsten Films

采用氟化物氢还原的方法制备钨涂层。结果显示涂层的厚度可达 15 0微米以上 ,密度为理论密度的 99%,纯度可达 99.9%。采用扫描电境分析沉积层组织形貌 ,结果显示气相沉积钨是沿沉积方向上生成柱状晶体结构。

Tungsten films may be deposited by the hydrogen reduction of tungsten hexafluoride. The films thickness is 150um.The purity 99.9%.The density 99%TD.The CVD tungsten films are cylindric microstructure along the lines of deposition.