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AlGaInP/GaAs异质结双极晶体管直流特性研究 被引量：1

DC performance of AlGaInP/GaAs HBT
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摘要 制备了大尺寸AlGaInP/GaAsSHBT和DHBT,对其直流特性进行了测试,并分析了AlGaInP/GaAs单异质结晶体管(SHBT)和双异质结晶体管(DHBT)的直流特性差异,深入研究了影响AlGaInP/GaAsHBT开启电压(Voffset)的各个因素。结果表明:AlGaInP/GaAsHBT开启电压与外加基极电流密切相关,采用宽发射区可大大降低器件的开启电压。 Large- scale Heterojunction Bipolar Transistors were fabricated by using AlGaInP/GaAs HBT material grown by MOCVD. DC characteristics of AlGaInP/GaAs SHBT and AlGaInP/GaAs DHBT were studied. In addition, the collector- emitter offset voltages of AlGaInP/GaAs HBT were investigated, and several electrical factors affecting the offset voltage were discussed in detail. The results show that the collector- emitter offset voltages of AlGaInP/GaAs HBT are closely related to base current. And the collector- emitter offset voltage of AlGaInP/GaAs HBT can be decreased greatly by adopted wide emitter.
作者 李冰寒 刘文超 周健 夏冠群
机构地区 中国科学院上海微系统与信息技术研究所
出处 《功能材料与器件学报》 CAS CSCD 2003年第3期327-332,共6页 Journal of Functional Materials and Devices
关键词 AlGaInP/GaAs 异质结双极晶体管 直流特性 开启电压 SHBT DHBT HBT AlGaInP/GaAs DC characteristics collector- emitter offset voltage
分类号 TN322.8 [电子电信—物理电子学]
  • 相关文献

参考文献17

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共引文献8

同被引文献10

  • 1[1]P.A.Houston,High-frequency heterojunction bipolar transistor device design and technology[J].Electronics & Communication Engineering Journal,2000,10:220-228
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功能材料与器件学报
2003年 第3期

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