摘要
采用气相法对PbTiO3陶瓷扩渗Gd元素,经扫描电镜和X射线能谱分析,证实Gd元素已渗入到PbTiO3陶瓷中,并使PbTiO3陶瓷的导电性能和介电性能发生了十分显著的变化。经Gd扩渗,PbTiO3陶瓷的室温电阻率从2.0×1010Ω·m下降为0.25Ω·m,已趋近导体。随着温度升高,晶粒电阻和晶界电阻逐渐降低,导电性更强。Gd扩渗使PbTiO3陶瓷的介电常数较纯PbTiO3陶瓷明显增大。
The penetration of Gd element in gaseous phase into PbTiO3 ceramics was reported. It is confirmed that as a result of penetration Gd into PbTiO3 ceramics, the conductivity and the dielectric characteristics of PbTiO3 ceramics are improved obviously. The resistivitiy of Gd- penetrated PbTiO3 ceramics decreases from 2.0× 1010Ω · m to 0.25Ω · m, which is approaching to that of conductor. The grain resistance and the grain boundary resistance decrease with increase of temperature, so that the electrical conductivity is improved. The dielectric constant of Gd- penetrated PbTiO3 ceramics increases obviously.
出处
《功能材料与器件学报》
CAS
CSCD
2003年第3期333-336,共4页
Journal of Functional Materials and Devices
基金
黑龙江省重点攻关项目(GB02A301)
关键词
钛酸铅陶瓷
气相扩渗
导电性能
介电性能
GD
Gd
PbTiO3 ceramics
gas penetration
conductivity
dielectric constant
