摘要
In this paper, we report the parameter-dependent oxidation of physically sputtered Cu and the related fabrication of Cu-based semiconductor films with metallic resistivity. It was found that various Cu-based(oxide) films such as pure Cu, Cu2 O, Cu O films and Cu/Cu2 O, Cu2O/Cu O composite films could be obtained by simply adjusting the deposition parameters during physical sputtering deposition. The main oxygen source for the oxidation of Cu and the parameter-dependent oxidation mechanisms were explored. Further, the electrical and optical testing results show that the obtained pure Cu film and Cu/Cu2 O composite film both present an intriguing combination of metal and semiconductor characteristics.
本文研究了依赖于参数物理溅射铜的氧化以及相关金属电阻率铜基半导体薄膜的制备.研究发现,在物理溅射过程中,通过简单地调节沉积参数可以得到各种各样的铜基(氧化)薄膜,如纯Cu、Cu2O、Cu O薄膜和Cu/Cu2O、Cu2O/Cu O复合薄膜.文中揭示了物理溅射铜氧化的主要氧来源和依赖于参数的氧化机制.进一步地,电学和光学测试结果表明,所得的纯Cu薄膜和Cu/Cu2O复合薄膜均表现出奇异的金属、半导体双特性.
基金
supported by the National Natural Science Foundation of China(11204257)
