Synthesis,structural and dielectric properties of Ho-doped SrBi_2Nb_2O_9 prepared by Co-precipitation method
共沉淀法制备Ho掺杂srBi_2Nb_2O_9的结构及介电性能研究(英文)
摘要
This paper reported the synthesis of Ho-doped SBN(SrBi_(2-x)Ho_xNb_2O_9:x = 0 and 0.4) by a co-precipitation method and investigated the synthesized material with X-ray diffraction analyses,infrared spectroscopy,and electrical measurements.The results show that the Ho-doped SBN has low loss values at higher frequencies and the flattening of dielectric constant which are very desirable in nonvolatile ferroelectric random access memory applications.
本文报道了一种共沉淀法制备Ho掺杂SBN(SrBi_(2-x)Ho_xNb_2O_9:x=0和0.4),并利用X射线衍射、红外光谱和电学测试对其进行表征.结果表明,Ho掺杂SBN在较高频下具有低损耗和稳定的介电常数.因此这种材料非常适用于非易失FeRAM存储器的应用.
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