极低内阻数字微安/毫安表的研制

Development of very low internal resistance digitalmicroamps / milliammeter

通过对现今微电流信号检测方法的调查发现,在微电流的实际测量中由于测量仪表内阻的存在给测量条件带来很大的影响.因此利用低漂移集成运算放大器OP07和OPA551芯片、电阻、电位器、LM7805、LM7905等设计电路,制作出了用数字电压表表头显示其输出电压的一种在20μA到200m A之间的数字微安/毫安表.对单晶硅和多晶硅光电池样品做实测实验,实测结果表明,设计和试制达到的预期目标.该测量仪内阻趋近于零,大大降低了测量的误差,提高了测量准确度.

Based on current micro current signal detection method,the survey found that in the actual measurement of micro electric current as a result of the existence of measuring instrument internal resistance bring great influence on measuring conditions. By using the operational amplifier OP07 and OPA551 chips,resistors,potentiometers,LM7805,LM7905,we designed the digital voltmeter header It shows the output voltage of 20μA to 200 m A display. Measurement experiment of monocrystalline silicon and polycrystalline silicon photocell samples have been measured,and results show that the design and manufacture of the desired goal. Resistance the measurement instrument is close to zero,which greatly reduce the measuring error,improve the measurement accuracy.