电磁脉冲对MOSFET的热损伤效应研究

Research on Thermal Damage Effect of MOSFET under EMP Injected

针对金属氧化物半导体场效应管(MOSFET)在电磁脉冲作用下的热损伤问题,提出了一种新的热分析方法,通过仿真漏极注入阶跃脉冲下器件内部的温度响应研究了其损伤机理和规律。基于热效应半导体基本方程和热流方程,建立了用于仿真的器件模型和数值模型。采用注入法,以阶跃脉冲信号为输入,仿真研究了不同偏压上升时间和幅值下的器件损伤。结果发现:阶跃脉冲电压幅值一定时,MOSFET器件内部的温升过程及最后达到的最大温度与脉冲上升时间无关,器件在经过雪崩击穿、电流模式二次击穿后,温度迅速上升直至器件烧毁,烧毁所用时间与脉冲上升时间满足线性关系;脉冲上升时间一定时,器件温升随电压幅值增加而明显加快,器件能达到的最高温度也随之增加,器件烧毁所需时间与电压幅值的大小满足幂函数关系。研究对MOSFET的电磁脉冲毁伤机理认识和加固防护设计有一定的参考价值。

Aiming at the damage of metal-oxide-semiconductor field-effect transistor(MOSFET)under electromagnetic pulse(EMP)injected,a new thermal analysis method was put forward in this paper.The damage mechanism and regulation were studied by simulating the internal temperature response of MOSFET under the EMP injected into the drain electrode.According to the general equation and heat flux equation of semiconductor based on thermal effect,the device model and numerical model were established for simulation.Using injected method,the device damage under various rise time and amplitude of voltage was analyzed through simulation when the step pulse signal was input.The results showed that the internal temperature rose process and the maximum temperature in MOSFET device had nothing to do with the pulse rise time when the voltage amplitude of step pulse was fixed.After the avalanche breakdown and current mode second breakdown,the device temperature raised rapidly until the device was burned.The burnout time and pulse rise time were satisfied linear relationship.When the pulse rise time was stayed the same and the rise of temperature in the device was speeded up with increasing of the voltage amplitude.The highest temperature that the device can achieve also increased.The burnout time of the device and voltage amplitude satisfied power function relationship.The study has some reference valuable for the mechanism research of EMP damage of MOSFET and the reinforcement and protection design.