以高性价比颗粒硅带为衬底多晶硅薄膜的二次引铝低温制备法

Preparation of Polycrystalline Silicon Thin Films on Cheap Silicon Sheets from Powder Substrate by PECVD and Introducing Aluminum Twice

本文报道了在廉价的颗粒硅带上用PECVD法并两次引入铝的工艺制备多晶硅薄膜。第一次引入铝是为了去除薄膜上过多的杂质 ;第二次引入铝是为了实现低温诱导结晶。通过对薄膜样品的拉曼谱和X射线衍射 (XRD)谱分析 ,我们认为金属低温诱导结晶成功与否跟诱导前薄膜的结构密切相关。采用该工艺成功地制备了结晶度 92 %左右、可应用于太阳能电池的高纯优质多晶硅薄膜。

This paper developed the technics that on the cheap substrate, silicon sheets from powder, polycrystalline silicon films were deposited by plasma enhanced chemical vapor deposition (PECVD) and introducing aluminum twice. The aim of introducing aluminum the first time is to get rid of the impurity in the film and on the surface of the film; the second time is to realize metal-induced crystallization at low temperature. We analyzed the Raman and X-ray diffraction spectrums of the samples and reached the conclusion that the success of metal-induced crystallization depends on the structure of the film before induced.Finally,highly pure polycrystalline silicon films with the crystallinity of 92% were prepared by this technics successfully,which can be used in solar batteries.