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加氮对直流电弧等离子体喷射金刚石膜生长、形貌和质量的影响 被引量:2

Effects of Nitrogen Addition on Growth,Morphology and Quality of DC Arc Plasma Jet CVD Diamond Films
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摘要 利用直流等离子体喷射化学气相沉积法制备掺氮的金刚石厚膜。本文研究了在甲烷 /氩气 /氢气中加入氮气对金刚石膜生长、形貌和质量的影响。反应气体的比例由质量流量计控制 ,在固定氢气 (5 0 0 0sccm)、氩气(30 0 0sccm)、甲烷 (10 0sccm)流量的情况下改变氮气的流量 ,即反应气体中氮原子和碳原子的变化比例 (N/C比 )范围是从 0 .0 6到 0 .6 8。同时金刚石膜在固定的腔体压力 (4kPa)和衬底温度 (80 0℃ )下生长。金刚石膜用扫描电镜(SEM)、拉曼谱和X射线衍射表征。结果表明 ,氮气在反应气体中的大量加入对直流等离子体喷射制备金刚石膜的形貌、生长速率、晶体取向、成核密度等有非常显著的影响。 Nitrogen-doped diamond films were synthesized by 100kW DC arc plasma jet chemical vapor deposition using a CH_4/Ar/H_2 gas mixture. The effect of nitrogen addition into the feed gases on the growth and surface morphology and mechanical property of diamond film was investigated. The reactant gas composition was determined by the gas flow rates at a constant flow rate of hydrogen (5000sccm) and methane (100sccm), the nitrogen to carbon ratios (N/C) were varied from 0.06 to 0.68. The films were grown under a constant pressure (4kPa) and a constant substrate temperature (1073K). The deposited films were characterized by scanning electron microscopy, Raman spectroscopy, and X-ray diffraction. The results show that nitrogen addition to CH_4/H_2/Ar mixtures leads to a significant change of film morphology, growth rate, crystalline orientation, nucleation density for free-standing diamond films prepared by DC arc plasma jet.
机构地区 北京科技大学
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2003年第4期386-392,共7页 Journal of Synthetic Crystals
关键词 直流电弧等离子体 喷射 金刚石膜 生长 形貌 质量 晶体取向 成核密度 diamond films nitrogen morphology crystalline orientation nucleation density
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参考文献13

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同被引文献8

  • 1杨胶溪,李成明,陈广超,苗晋琦,宋建华,吕反修,唐伟忠,佟玉梅.加氮对直流电弧等离子体喷射金刚石膜显微组织和断裂强度的影响[J].金属热处理,2004,29(5):1-5. 被引量:1
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  • 8毛卫民,张弘.大规模集成电路导电薄膜的织构效应[J].北京科技大学学报,2000,22(6):539-542. 被引量:8

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