光导型半导体探测器中载流子分布的数值计算

Numerical Calculation of Photocarriers Distribution in PC-type Semiconductor Detectors

提出了光导型半导体探测器内载流子输运的动力学模型及方程组 ,并对方程组进行了数值求解。得到了不同激光辐照功率密度下光导型 Hg Cd Te探测器内载流子浓度及电场的分布规律 ,以及载流子寿命等参数对载流子密度分布的影响情况。由数值计算结果得出的探测器内阻在激光辐照前后的变化规律与成熟的理论规律相同。

A dynamics model and the relevant equations describing transport of photocarriers in PC-type semiconductor detectors are established. By numerical calculation of the equations, the photocarrier densities and electric intensity distributions in the HgCdTe detectors under laser irradiation at different powers are obtained. The results show that the densities of photocarriers are affected by their life-times also. The variations of electrical resistances of the detector with and without laser irradiation calculated using the suggested model are consistent to the established theory.