摘要
文章对9926型双N沟增强型VDMOSFET进行了结构和版图的优化设计。给出了该器件的纵横向结构参数,材料的物理参数和版图总体结构。单胞结构的优化设计使单胞密度达到204万个/cm2,比国际市场现有产品的单胞密度(156万个/cm2)提高了30%。这种设计采用浅n+注入工艺可使器件生产成本下降31%。最后对研制结果进行了分析讨论。
The optimal design of structure and layout for9926dual N-channel enhancement mode VDMOSFET is presented.The vertical and lateral structural parameters,physical parameters of material and total structure of layout for the fabricated device are put forward.The optimal design of unit cell structure make cell density reached2.04million/cm 2 ,it has increased by30percent compared to cell density of international market existing products(1.56million/cm 2 ).The production costs of device may reduce31percent with the shallow n + implant technology.Lastly,the Manufacture results are discussed.
出处
《微电子学与计算机》
CSCD
北大核心
2003年第9期58-59,78,共3页
Microelectronics & Computer
