摘要
基于正统单电子理论,提出了单电子晶体管的I-V特性数学模型。该模型的优点是:它由实际物理参数直接获得;支持双栅极工作,更利于逻辑电路应用。I-V特性和跨导仿真结果证实了它的准确性。
A mathematical model of the I-V property of single-electron transistors(SETs)is proposed based on the orthodox single-electron theory.It has some advantages:it is directly calculated by physical parameters,it can work in double-gate SET and the applications are promising in the logic circuits.The accuracy is validated by simulation results of the I-V property and transconductances.
出处
《微电子学与计算机》
CSCD
北大核心
2003年第9期76-78,共3页
Microelectronics & Computer
基金
陕西省自然科学基金资助项目(2002F34)
空军工程大学学术基金资助项目(2002X12)
