氧等离子体对金刚石膜的刻蚀研究

Etching of a diamond film by oxygen plasma

用微波放电法产生氧等离子体,通过改变系统中氧的浓度和金刚石膜的温度研究了氧等离子体对CVD多晶金刚石膜刻蚀的影响。实验结果表明:随着氧浓度的增加和金刚石膜温度的提高,刻蚀作用加剧;而在较低的氧浓度和金刚石膜温度条件下金刚石膜的晶界处首先被刻蚀,说明金刚石膜的境界处含有较多的非金刚石碳相。并且从等离子体对(100)和(111)面的刻蚀现象可知(100)面的生长是二维生长,(111)面的生长是岛状生长。

Oxygen plasma was generated by a microwave glow discharge method. The etching effect of oxygen plasma on CVD diamond films was investigated by changing the oxygen concentration and diamond film temperature in the system. The results show that etching effects were aggravated with increasing oxygen concentration and diamond film temperature. When the oxygen concentration and the diamond film temperature were lower, the grain boundaries of the diamond film were etched. This shows that the non-diamond carbon phase in diamond films exists mostly in the grain boundaries. From the etching effect on the ( 100) and (111) faces of the diamond film, it can been seen that the growth mode of the ( 100) face is two dimensional, while that of the (111) face is three dimensional.