摘要
研究了硫酸/盐酸比例、温度和Al3+含量对高纯铝箔隧道孔生长的影响,发现随着硫酸浓度增加,温度对隧道孔极限长度和孔径的影响减小,在本文条件下隧道孔生长的临界温度最低可降低到35℃。在电解液中一定含量的Al3+可以避免铝箔表面形成大孔,从而改善隧道孔分布均匀性。
The influence of H2SO4/HCl ratio, temperature and Al3+ content on the tunnel growth of high purity aluminum foils for electrolytic capacitors was investigated. It is found the influence of temperature on the limit length and diameter of the tunnels becomes weak when H2SO4 concentration increases. In this study, the critical temperature is as low as 35℃. When Al3+ content well controlled, the tunnels are evenly distributed and cavities avoided.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2003年第10期10-12,共3页
Electronic Components And Materials
关键词
隧道孔
浸蚀
高纯铝箔
铝电解电容器
tunnels
etching
high purity Al foil
Al electrolytic capacitors