摘要
IGBT广泛应用于电子、新能源、铁路交通、智能电网等领域.由于难以克服IGBT关键的减薄工艺与背面集电极工艺难题,1 200 V以上的耐高压IGBT领域还是少有产品问世.文章主要研究1 700 V高压的IGBT管芯结构设计和制造的关键工艺,包括双面深结扩散工艺、背面透明集电极工艺、结终端结构设计及版图设计等.这些关键技术的应用提升了IGBT管芯的耐高压性能和工作稳定性、可靠性.
Insulated Gate Bipolar Transistor(IGBT) has been widely applied in electronics,new resources of energy,railway communication,smart grids and other fields.Few withstanding high voltage 1200V IGBT products are available for the key technology problems of reducing the thickness and back collector regions.The paper studied the design and key technologies of withstanding high voltage and current stressing Insulated Gate Bipolar Transistor(IGBT),covering the duplicated deep knot diffusion process,back clearlook collector regions technology,and the ends of knots design and layout design.The application of the key technologies helps improve the withstanding high voltage and its working stability and reliability.
出处
《绍兴文理学院学报》
2014年第8期4-8,共5页
Journal of Shaoxing University
关键词
IGBT
双面深结扩散
背面透明集电极
结终端结构
IGBT
duplicated deep knot diffusion process
back clearlook collector region
the end of knot design and layout
