高密度羟自由基生成技术的研究

Research on High-density Hydroxyl Radical Generation Technology

随着晶片等电子元件集成化、小型化和精细化快速发展,半导体行业对加工过程中电子元件表面附着重金属和油类等污染物的清洗技术要求也越来越高。传统的化学清洗法已逐渐被禁用,超声等物理清洗法处理效果较差且已不能满足当前需求。羟基自由基具有强氧化性目前已被广泛应用于高浓度、高稳定结构的有机物清洗,但由于现有单一的电Fenton法、电解氧化法、光电催化法和半导体催化法产生自由基密度较低,氧化能力有限,极大地限制了其应用范围。采用化学发光法将所有生成的氧化剂浓度转化为臭氧浓度后进行对比分析,进行半定性半定量测定,并系统性研究了臭氧、紫外光照射、低兆赫超声和二氧化钛纳米管光催化技术多项联用下,对羟基自由基生成浓度的影响。

With the rapid development of the integration,miniaturization and refinement of electronic components such as wafers,the semiconductor industry has increasingly high requirements for cleaning technology of heavy metals,oil and other pollutants on the surface of electronic components during processing.The traditional chemical cleaning method has been gradually disabled,and the physical cleaning method such as ultrasound is not effective enough to meet the current needs.Hydroxyl radical has strong oxidability,so it has been widely used in cleaning organic matters with high concentration and high stable structure.In this paper,the concentration of all generated oxidants was converted to ozone by the chemiluminescence method,and then semi-qualitative semi-quantitative comparison and analysis were carried out.The effect of multiple combination of ozone,ultraviolet light irradiation,low MHZ ultrasound and titanium dioxide nanotube photocatalysis on the concentration of hydroxyl radicals was systematically studied.