银纳米线基导电材料电性能的仿真分析

Simulated Analysis of Electronic Conductivity of Silver Nanowires-Based Materials

银纳米线作为柔性电子设备的关键制备材料之一,受到人们的广泛关注。高长径比的银纳米线通常可制备出高性能材料,但目前对其机理研究尚不透彻。本研究通过构建一维和三维银纳米线的仿真模型,模拟计算不同尺寸的银纳米线对材料电性能的影响,并考虑到银纳米线在材料中的实际分布情况,对电性能进行仿真分析。结果表明,更高长径比的银纳米线通过构建更多的并联电路,可有效降低材料电阻,从而有效提高材料的光电性能。

As one of the core parts of fabricating flexible electronics,silver nanowires has received great interest.Silver nanowires with high length/diameter ratio is applied to fabricate materials with high performance,but the mechanism has not been thoroughly studied.1 D and 3 D simulation model of silver nanowires were built in this study.Resistance of materials with different sizes of silver nanowires and different distributions of silver nanowires in matrix considering practical facts were calculated.The results showed that applying silver nanowires with higher length/diameter ratio can reduce the resistance effectively and increase photoelectric properties by constructing more multiple circuits.