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2.5GHz分布反馈激光器内部参数的实验测量 被引量：4

Extraction of the Parameters of 2.5 GHz DFB-LD Based on the Measurement
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摘要 用实验方法对激光器速率方程所涉及的激光器内部参数进行了测定。然后利用该参数 ,通过半导体激光器的大信号速率方程 ,得到它的光输出脉冲波形和啁啾的数值解 ,对模拟结果与测量结果进行比较 。 The semiconductor laser rate equations are rewritten using a new set of parameters which can all be found from steady state and small signal measurements on the laser. Procedures for finding these parameters are described. Parameters have been measured on 1537.5 nm DFB laser. Comparison between large signal measurements and simulations using the measured parameters shows in general good agreement for modulation currents sufficiently above threshold.
作者 朱德鹏 王卓然 于晋龙 刘志刚 杨恩泽
机构地区 天津大学电子信息工程学院光纤通信实验室
出处 《中国激光》 EI CAS CSCD 北大核心 2003年第6期485-488,共4页 Chinese Journal of Lasers
关键词 激光技术 速率方程 半导体激光器 啁啾 Lasers Measurements Modulation
分类号 TN248 [电子电信—物理电子学]
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参考文献5

  • 1J C Cartledge, R C Srinivasan. Extraction of DFB Laser rate equation parameters for system simulation purposes [J]. J. Lightwave Technol , 1997, 15(5):852-860.
  • 2L Ramunno, J E Sipe. Dynamical model of directly modulated semiconductor laser diodes [J]. IEEE J,Quantum Electron, 1999. 35(4):624-634.
  • 3Leif Bjerkan, Arne Rgeyset, Laser Hafskjaer et al..Measurement of laser parameters for simulation of high-speed fiberoptic systems [J], J. Lightwave Technol ,1996, 14(5) :839-850.
  • 4R S Tucker. High-speed modulation of semiconductor lasers [J]. J, Lightwave Technol, 1985, 3(6): 1180-1192.
  • 5Gao Jianjun. Gao Baoxin. Liang Chunguang. The direct extraction of the model parameters for the high-speed low-threshold semiconductor laser [ C]. Asia-Pacific Microwave Conference Proceedings. APMC. 1997. Vol.2. 569-571.

同被引文献23

  • 1张尚剑,刘超,伞海生,祝宁华.基于扣除法的半导体激光器高频响应仿真新方法[J].Journal of Semiconductors,2005,26(6):1224-1228. 被引量：3
  • 2朱利凯,于晋龙,王耀天,杨恩泽.注入连续光实现锁模光纤激光器的波长稳定[J].中国激光,2006,33(2):149-152. 被引量：5
  • 3R. S. Tucker. High speed modulation of semiconductor lasers[J]. J. Lightwave Technol. , 1985, 3(6): 1180-1192.
  • 4M. L. Majewski, D. Novak. Method for characterization of intrinsic and extrinsic components of semiconductor laser diode circuit model [J]. IEEE Microwave and Guided Wave Lett. ,1991, 1(9): 246-248.
  • 5N. H. Zhu, Y. I.iu, E. Y. B. Pun et al.. Scattering-parameter measurements of laser diodes [J].Opt. Quant.Electron. , 2002, 34(8) : 747-757.
  • 6R. S. Tucker, D. J. Pope. Microwave circuit models of semiconductor injection laser[J]. IEEE Trans. Microwave Theory Technol. , 1983, 31(3): 289-294.
  • 7J. Katz, S. Margalit, C. Harder et al.. The intrinsic electrical equivalent circuit of a laser diode [J]. IEEE J. Quantum Electron. , 1981, QE-17(1) : 4-7.
  • 8P. D. Hale, D. F. Williams. Calibrated measurement of optoelectronic frequency response [J]. IEEE Trans.Microwave Theory and Techniques, 2003, 51(4): 1422-1429.
  • 9P. S. Andre, A. Nolasco Pinto, J. L. Pintoet al.. Extraction of DFB laser rate equations parameters for optical simulation purpose [C]. Conftele'99, ISBN 972-98115-0-4. 561-564.
  • 10P. Dibie, I.. Martens. Correction technique for on-chip modulation response measurements of optoelectronic devices[J]. IEEE Trans. Microwave Theory Technol. , 1995. 43(6) :1264-1269.

引证文献4

二级引证文献12

中国激光
2003年 第6期

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