2SHIDA N, OKINO T. Chemical amplified ArF resists based on menthyl acrylate copolymer protected with cleavable alicyclic group and the absorption band shift method Proc[J]. SPIE, 1998, (3333) : 10 -16.
3IWASA S, NAKANO K, HASEQAWA E, et al. Photosensitive resin composition useful as resist for deep UV lithography containing sulfonium salts [P]. US:US5691111 A, 1997 -11 -25.
4JUNG JCH, BOKCH K, BALK K K. Design of cycloolefin-maleic anhydride resist for ArF lithography[ J]. Proc SPIE, 1998, 3333 : 2.
5HOULIHAN F M, KOMETANI JM, TIMKO A G, et al. 193nm single-layer photoresists based on alternating[ J]. Proe SPIE, 1998, 3333: 8.
6ALLEN R D, WALLRATT G M, HOFER D C, et al. Photoresists for 193-nm lithography[ J]. IBMJ Res Develop, 1997, 41 : 102 -108.
7WANG Li-yuan, ZHAI Xiao-xiao, HUO Yong-en. Novel 193-nm positive photoresist composed of ester acetal polymer without phenyl group[ C ]. Proc of SPIE-Advances in Resist Technology and Processing XXIV,2007,6519 -99.
8WANG Li-yuan, CHU Zhan-xing, CHENG Long. Two-component photoresists based on acidolytic cleavage of novel ester acetal polymer[ C ]. Proc of SPIE-Advances in Resist Technology and Processing XXIV,2007,6519 - 100.
