摘要
研究了掺Ce对SnO2·Co2O3·Nb2O5压敏电阻器性能的影响。研究发现Ce4+对Sn4+的取代能明显提高陶瓷的致密度,掺入x(CeO2)为0.05的陶瓷样品具有最高的密度(ρ=6.71g/cm3),最高的视在势垒电场(EB=413.6V/mm),最高的非线性系数(α=13.8),最高的势垒电压和最窄的势垒厚度。为了解释样品电学非线性性质的起源,该文提出了SnO2·Co2O3·Nb2O5·CeO2晶界缺陷势垒模型。同时,对该压敏电阻器进行了等效电路分析。试验测量与等效电路分析结果相符。
The effects of rareearth Ce on the electrical properties of (Nb, Co, Ce)doped SnO2 varistors were investigated.The substitution of Sn4+ with Ce4+increases the varistor densities greatly. It was obtained that the sample doped with 005%CeO2 possess the highest density (ρ=6.71 g/cm3), the highest reference voltage (EB=4136 V/mm) and the highest nonlinear electrical coefficient (α=13.8) among the Cedoped SnO2·Co2O3·Nb2O5. In order to illustrate the origin of the electrical nonlinearity for SnO2·Co2O3·Nb2O5·CeO2 varistors, a grainboundary defect barrier model was proposed. Meanwhile, an analysis of an equivalent circuit for the varistors was conducted. The experimental result is coincident with that of equivalent circuit.
出处
《压电与声光》
CSCD
北大核心
2003年第4期280-283,共4页
Piezoelectrics & Acoustooptics
基金
国家理科人才培养基地建设项目
