50nmSOI-DTMOS器件的性能

50nm SOI-DTMOS Device Performances

利用二维器件模拟软件ISE对 5 0nm沟道长度下SOI DTMOS器件性能进行了研究 ,并与常规结构的SOI器件作了比较 .结果表明 ,在 5 0nm沟长下 ,SOI DTMOS器件性能远远优于常规SOI器件 .SOI DTMOS器件具有更好的亚阈值特性 ,其亚阈值泄漏电流比常规SOI器件小 2～ 3个数量级 ,从而使其具有更低的静态功耗 .同时 ,SOI DTMOS器件较高的驱动电流保证了管子的工作速度 ,并且较常规SOI器件能更有效地抑制短沟道器件的穿通效应、DIBL及SCE效应 ,从而保证了在尺寸进一步减小的情况下管子的性能 .对SOI DTMOS器件的物理机制进行了初步分析 ,揭示了其性能远优于常规结构的物理本质 ,同时也指出了进一步研究的方向 .

The 50nm SOI-DTMOS device performances are researched and compared with the conventional SOI device by using ISE,the two-dimensional device simulation software ISE.The results show that at a gate length of 50nm the performances of SOI-DTMOS have much advantages over conventional SOI device.SOI-DTMOS has a better sub-threshold characteristics,much smaller sub-threshold leakage current,and thus lower static power.Furthermore,SOI-DTMOS has a comparatively high drive current guaranteeing the speed of the device.Compared with the conventional SOI device,SOI-DTMOS can effectively restrain the punch-through,DIBL,SCE effects,and thus keeps the good performance on further scaling-down.Simple analysis on the physical mechanism of SOI-DTMOS device and the physical characteristics accounting for its advantages.And the direction of further research,is pointed out.