期刊文献+

大功率半导体激光器阵列稳态温度分布分析 被引量:7

Temperature Distribution Analysis of High Power Laser Arrays in Static Working Condition
下载PDF
导出
摘要 通过对大功率激光器阵列热现象的分析 ,采用有限元分析法建立了大功率激光器稳态工作时的空间温度分布模型 ,给出了具体的温度分布曲线 ,由此模型得出大功率激光器阵列沿谐振腔方向有一定的温度差 .该模型给出的载体、芯片的温度分布 ,可以指导阵列载体、散热器的设计 ,优化它们的尺寸 .样品的实验数据与模型的理论预测结果吻和得很好 . A model of temperature distribution is built for high power laser arrays under the thermal analysis of the static working condition by FEM.There is a temperature difference along the cavity's longitudinal direction of the laser according to the calculation results of the model.The distribution of temperature gained from the model gives a certain reference to the design of laser array's submount and cooler.Experimental results from test of the laser diode wavelengths and the test data of the thermal coupler match the theoretical predication well.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第10期1084-1088,共5页 半导体学报(英文版)
关键词 大功率 激光器阵列 热模型 温度分布 high power laser diode array thermal model temperature distribution
  • 相关文献

参考文献10

  • 1朱东海,王占国,梁基本,徐波,朱战萍,张隽,龚谦,金才政,丛立方,胡雄伟,韩勤,方祖捷,刘斌,屠玉珍.高温连续输出AlGaAs大功率单量子阱激光器的工作特性[J].Journal of Semiconductors,1997,18(5):391-394. 被引量:1
  • 2朱东海,梁基本,徐波,朱战萍,张隽,龚谦,李胜英,王占国.808nm GaAs/AlGaAs大功率半导体激光器波长的影响因素及控制[J].Journal of Semiconductors,1997,18(2):108-112. 被引量:4
  • 3Endriz J G,Vakili M,Browder G S. High power diode laser arrays. IEEE J Quantum Electron, 1992,28(4), 952.
  • 4Bezotosnyi V V,Kumy Kov K. Modeling of the thermal parameters of high power linear laser-diode arrays:two-dimensional transient model. Quantum Electron,1998,28(3) :217.
  • 5Sakamoto M, Endriz J G, Scifres D R. 20W CW monolithic AIGaAs (810nm) laser diode arrays. Electron Lett, 1992, 28(2) : 178.
  • 6Sakamoto M,Cardinal M R,Endriz J G. Performance characteristic of high power CW, lcm wide monolithic AIGaAa laser diode arrays with a 2mm total aperture width. Electron Lett,1990,26(7) :422.
  • 7Sakamoto M,Endriz J G,Scifres D R. 120W CW output power from monolithic AIGaAs (800nm) laser diode array mounted on diamond heatsink. Electron Lett, 1992,28 (2) :197.
  • 8Puchert R,B~irwolff A,Tomm J W. Facet temperature limits of GaAIAs/GaAs high power laser diode arrays. CLEO'97,1997:CM A7.
  • 9Puchert R,B~irwolff A. Influence of the mounting configuration on the transient thermal behavior of high power laser diode arrays. Electronic Components and Technology Conference, 1997:1254.
  • 10Voss M,Lier C,Menzel U. Time-resolved emission studied of GaAs/AIGaAs laser diode arrays on different heatsinks. J Appl Phys, 1996,79(2) : 1170.

二级参考文献4

共引文献3

同被引文献62

引证文献7

二级引证文献25

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部