摘要
研究了不同气氛 (N2 、O2 、Ar)下高温快速热处理 (RTP)对热施主形成和消除特性的影响 .研究发现无论在何种气氛下进行高温RTP ,对热施主的形成均无影响 .扩展电阻的分析结果表明 ,热施主在硅片纵向的分布是均匀的 .根据高温RTP后硅片的空位特征 ,认为点缺陷对热施主的形成特性无影响 .同时研究了高温RTP预处理对热施主消除特性的影响 ,发现氧气和氩气高温RTP的样品其生成的热施主经过 6 5 0℃退火即可消除 ,和普通的热施主消除特性相同 .而N2 气氛下高温RTP的样品 ,6 5 0℃退火后仍有部分施主存在 ,经 95 0℃退火才能彻底消除 ,这可能是由于RTP处理中发生氮的内扩散 ,在后续热处理中形成氮氧复合体浅施主中心所致 .
The work is intended to examine the effect of rapid thermal processing (RTP) in different atmospheres (N 2,O 2,Ar) on the generation and annihilation of thermal donors (TDs) in silicon.After RTP preannealing at 1250℃ in different atmospheres (N 2,O 2,Ar),the difference in generation of TDs in silicon subsequently annealed at 450℃ is not found.The distribution of TDs measured by spreading resistivity (SR) is even.The experimental results indicate that the formation of TDs is not related with the point defects but has an excellent agreement with chain-model of TDs.The TDs with RTP preanealing in O 2 or Ar are annihilated by annealing at 650℃ for 1h,but partial donors are remained for RTP preanealing in N 2,which should be annihilated subjected to 950℃ annealing for 1h.It may be due to the formation of nitrogen-oxygen complexes.
基金
国家自然科学基金资助项目 (批准号 :5 0 0 32 0 10
90 2 0 70 2 4)~~
