摘要
在GaAs低场电子迁移率解析模型的基础上得到了纤锌矿GaN低场电子迁移率的解析模型 ,该模型考虑了杂质浓度、温度和杂质补偿率对低场电子迁移率的影响 .模拟结果和测量数据的比较表明该模型在 10 16～ 10 2 0 cm-3的电子浓度、30～ 80 0K的温度和 0～ 0 9的杂质补偿率范围内具有较好的一致性 .该电子迁移率解析模型对于GaN器件的数值模拟和器件仿真设计具有很强的实用意义 .
Based on the analytic low field electron mobility model of GaAs,a new analytic low field electron mobility model of wurtzite GaN is presented.The new model accounts for the dependencies of dopant concentration,temperature,and impurity compensation ratio on low field electron mobility.A comparison between simulation and measurement results shows that the new analytic model has a good agreement in the electron concentration range of 10 16～10 20cm -3 and the temperature range of 30～800K.The analytic electron mobility model has a strong applicability for numerical simulation of GaN devices.
基金
国防预先研究资助项目 (编号 :4130 80 6 0 10 6 )~~
关键词
GAN
电子迁移率
解析模型
gallium nitride
electron mobility
analytic model
