摘要
用反应磁控溅射的方法制备了MgO薄膜.基于原子力显微镜观测,并借助Fourier变换,计算了薄膜表面形貌的分形维数.发现分形维数变化对应于薄膜溅射模式的变化,二者之间有相关性.氧分压30％的分形维数是一个临界点.分形维数若发生明显跌落,意味着溅射模式发生变化.界于临界值两侧的分形维数,分别对应两种截然不同的溅射模式.与临界值对应的溅射状态则处于金属模式和氧化物模式的混和状态.
MgO thin films were prepared by reactive magnetron sputtering with Mg as a target and O-2 as reactive gas, and characterized by atomic force microscopy (AFM). The method of Fourier transformation was used to calculate the fractal dimension of AFM images. The relationship between fractal dimension and sputtering mode was explored. The results show that the calculated fractal dimension D-fc of the film prepared at oxygen partial pressure of 30% is a critical value, corresponding to transition of sputtering mode. The sputtering modes are closely related to metallic and oxide modes respectively when their fractal dimension values are far beyond critical D-fc.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
2003年第10期1051-1054,共4页
Acta Metallurgica Sinica
基金
国家自然科学基金重点资助项目5993101O
国家教育部骨干教师计划资助
关键词
反应溅射
MgO薄膜
分形维
溅射模式
reactive magnetron sputtering
MgO film
fractal dimension
sputtering mode
