基于复射线方法的导电平板散射问题分析

Analysis on the Scattering of Conducting Plate by Complex Ray Method

本文通过建立导电平板反射场分析模型 ,利用复射线方法特别是角域中的复射线近轴近似方法 ,有效地实现了导电平板在整个后向范围内散射场的计算 ,同时计算精度可以由复射线展开参数 ξ来加以控制 .有关的数值计算结果及其与参考解的比较证实了本文所用方法的正确性和有效性 。

All backscattering field s intensity from conducting plate can be calculated by complex ray method, especially complex ray paraxial approximation in angle domain through modeling the conducting plate. In the meantime the calculating accuracy of the field's intensity can be controlled by modulating complex ray expansion parameter ξ. Comparison between the numerically calculated result and analytic solution proves that the method used in this paper is efficient and correct and it is applicable to other cases.