摘要
一维半导体材料由于其在空间二维的量子限域作用,而显示出非线性光学性能、光致发光、独特的光电性能以及单电子效应等,这些特性在电子和光电子元件方面具有潜在的巨大应用价值。一维半导体材料的制备技术已得到广泛研究,文献中报道了许多制备方法。对目前国内外制备半导体量子线的最新研究成果和方法进行了讨论,并对半导体量子线制备研究的发展趋势进行了预测。
One - dimensional nanostructure semiconductor materials possess some nontrivial properties, such as nonlinear optical absorption, photoluminescence, photoelectric property, single - electron behavior and so on. These properties have generated a tremendous amount of interests in fundamental and potential promising applications in electronic and photoelectronic devices. Up to now, scientists have developed many methods for their fabrication. In this thesis , the latest progresses and methods about the fabrication of one - dimensional nanostr ucture semiconductor materials today and anticipate its trend are discussed.
出处
《西南科技大学学报》
CAS
2003年第1期73-78,共6页
Journal of Southwest University of Science and Technology