热氧化法制备纳米ZnO薄膜及其发光特性的研究

Study of luminescent properties on ZnO thin films prepared by thermal oxidation of ZnS thin films

用热氧化ZnS薄膜方法制备纳米ZnO薄膜,并用X射线衍射谱,光致发光谱表征和研究纳米ZnO薄膜结构特征及热氧化温度对薄膜质量的影响。X射线衍射结果表明纳米ZnO薄膜具有六角纤锌矿结构,且随热氧化温度升高,薄膜晶粒尺寸逐渐增大。光致发光谱是由紫外激子发光和与氧空位有关的深能级缺陷发光组成的,且随热氧化温度升高,激子发光峰发生红移,激子发光和深能级缺陷发光强度之比逐渐增大,在热氧化温度为800℃时,其比值为10。

We report a simple method for preparing polycrystalline ZnO films by thermal oxidation of ZnS films. The structure of ZnO thin film and the effect of thermal oxidation on thin films were studied by Xray diffraction (XRD), Raman spectroscopy and PL spectra. The XRD patterns for ZnO films indicate that they possess a polycrystalline hexagonal wurtzite crystal structure and the particle size of ZnO increases with increasing thermal oxidation temperature. PL spectra show a UV exciton emission and a deeplevel emission. As increasing thermal oxidation temperature, the exciton emissions were redshift when thermal oxidation temperature was less than 800℃. The intensity ratio of the UV exciton emission to the deeplevel emission increases while thermal oxidation temperature increases to 800℃. The results indicate that the high quality ZnO film oxidized at 800℃ was obtained. 