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ZnSe单晶的气相生长及光学性质 被引量：1

Vapor growth and optical characterization of ZnSe single crystal
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摘要 　用改进的化学气相输运技术(CVT),以Zn(NH4)3Cl5为新的气相输运剂,直接从单质Zn和Se一步在封密管中生长了ZnSe单晶,升华温度1001～1020℃,管内温差<4℃。经过两周生长,得到8mm×7mm×0.8mm的绿色ZnSe晶体。XRD表明晶体表面为(111)面;受气固界面形貌影响,双晶衍射半高峰宽为50s;PL谱由DPA和SA两个发光峰组成;并研究了晶体片的吸收光谱、荧光光谱、反射光谱和红外透过等光学性质。 The ZnSe single crystal was grown by modified CVT method directly from element zinc and selenium in a closed ampoule. A compound, (NH4)3ZnCl5, was used as the novel transport agent The growth temperature was 1001～1020℃ and temperature difference was less than 4℃.The green single crystal of ZnSe 8mm×7mm×0.8mm has been grown in two weeks. XRD suggested that the ZnSe crystal has only (111) face. FWHM of double crystal rocking curve was 50s. PL spectra consists of DPA and SA bands. The optical properties of ZnSe single crystal, such as absorption spectrum, luminescence, reflection spectrum, and infrared transmittance spectrum, were also investigated.
作者 李焕勇 介万奇
机构地区 西北工业大学凝固技术国家重点实验室
出处 《功能材料》 EI CAS CSCD 北大核心 2003年第5期567-569,572,共4页 Journal of Functional Materials
基金 国家杰出青年基金资助项目(59825109)
关键词 化学气相输运 光学性质 输运剂 ZnSe单晶 气相生长 CVT optical properties Zn(NH_4)_3Cl_5 ZnSe single crystals
分类号 TN304.2 [电子电信—物理电子学]
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参考文献15

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同被引文献10

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2003年 第5期

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