摘要
利用磁控射频反应溅射方法制备了 ZrO2薄膜。分析了工艺对薄膜结构的影响,结构与摩擦学特征的关系。研究表明,氧分压和基片温度是影响薄膜结构,从而影响其摩擦学特性的关键因素。
ZrO2 thin films were deposited by R. F. magnetron reactively sputtering method. A pure metal Zr target was employed in the film deposition. The stoichiometry, crystallinity, microhardness. toughness, and wearability of the films were examined. From which, the correlation between deposition process, film structure, and properties is estabilished. The studies show that the substrate heating and oxygen partial pressure are the cristical parameters that alter the film microstruture and affect their mechanical properties.
出处
《清华大学学报(自然科学版)》
EI
CAS
CSCD
北大核心
1992年第5期72-79,共8页
Journal of Tsinghua University(Science and Technology)
基金
清华大学摩擦学国家重点实验室基金
关键词
薄膜
射频溅射
摩擦系数
氧化锆
ZrO2 thin film, R. F. sputtering, friction coefficient